Part Details for 2SA1313-Y,LF(B by Toshiba America Electronic Components
Overview of 2SA1313-Y,LF(B by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Price & Stock for 2SA1313-Y,LF(B
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
77816694
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Verical | 2SA1313-Y,LF(B Min Qty: 962 Package Multiple: 1 Date Code: 2401 | Americas - 12000 |
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$0.0700 / $0.0786 | Buy Now |
DISTI #
77293685
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Verical | 2SA1313-Y,LF(B Min Qty: 962 Package Multiple: 1 Date Code: 2401 | Americas - 3000 |
|
$0.0738 / $0.0786 | Buy Now |
|
Quest Components | 12823 |
|
$0.1138 / $0.6500 | Buy Now |
Part Details for 2SA1313-Y,LF(B
2SA1313-Y,LF(B CAD Models
2SA1313-Y,LF(B Part Data Attributes:
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2SA1313-Y,LF(B
Toshiba America Electronic Components
Buy Now
Datasheet
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2SA1313-Y,LF(B
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Collector Current-Max (IC) | 0.5 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 120 | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.2 W | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
VCEsat-Max | 0.25 V |