Part Details for 2SA1313-Y by Toshiba America Electronic Components
Overview of 2SA1313-Y by Toshiba America Electronic Components
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Industrial Automation
Motor control systems
Price & Stock for 2SA1313-Y
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12000 |
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RFQ | ||
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Chip1Cloud | TRANS PNP 50V 0.5A SMINI | 582100 |
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RFQ | |
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Perfect Parts Corporation | 6720 |
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RFQ | ||
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Win Source Electronics | TRANS PNP 50V 0.5A SMINI | 266000 |
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$0.0590 / $0.0880 | Buy Now |
Part Details for 2SA1313-Y
2SA1313-Y CAD Models
2SA1313-Y Part Data Attributes
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2SA1313-Y
Toshiba America Electronic Components
Buy Now
Datasheet
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2SA1313-Y
Toshiba America Electronic Components
TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 120 | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| VCEsat-Max | 0.25 V |