Part Details for 2SA965-Y by Toshiba America Electronic Components
Overview of 2SA965-Y by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for 2SA965-Y
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 5695 |
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$1.1261 / $3.2175 | Buy Now |
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Chip1Cloud | TRANS PNP 800MA 120V TO226-3 | 3240 |
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RFQ | |
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Sense Electronic Company Limited | TO92L | 1517 |
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RFQ |
Part Details for 2SA965-Y
2SA965-Y CAD Models
2SA965-Y Part Data Attributes:
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2SA965-Y
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SA965-Y
Toshiba America Electronic Components
TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | TO-92 | |
| Package Description | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.8 A | |
| Collector-Base Capacitance-Max | 40 pF | |
| Collector-Emitter Voltage-Max | 120 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 120 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.9 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 120 MHz | |
| VCEsat-Max | 1 V |