Part Details for 2SK1160-E by Renesas Electronics Corporation
Overview of 2SK1160-E by Renesas Electronics Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SK1160-E | Renesas Electronics Corporation | Silicon N Channel MOSFET, TO-220AB, /Tube |
Price & Stock for 2SK1160-E
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-2SK1160-E-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 98 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
393 In Stock |
|
$3.0700 | Buy Now |
DISTI #
2SK1160-E
|
Avnet Americas | - Rail/Tube (Alt: 2SK1160-E) RoHS: Compliant Min Qty: 118 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 393 Partner Stock |
|
$3.1000 | Buy Now |
|
Rochester Electronics | 2SK1160 - Power Field-Effect Transistor, 8A, 500V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 393 |
|
$2.6300 / $3.1000 | Buy Now |
Part Details for 2SK1160-E
2SK1160-E CAD Models
2SK1160-E Part Data Attributes
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2SK1160-E
Renesas Electronics Corporation
Buy Now
Datasheet
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2SK1160-E
Renesas Electronics Corporation
Silicon N Channel MOSFET, TO-220AB, /Tube
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | TO-220AB | |
Package Description | SC-46, 3 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | PRSS0004AC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |