There are no models available for this part yet.
Overview of 2SK2765-01 by Fuji Electric Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2SK2765-01 by Fuji Electric Co Ltd
Part Data Attributes for 2SK2765-01 by Fuji Electric Co Ltd
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|---|---|
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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FUJI ELECTRIC CO LTD
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Part Package Code
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TO-247
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Package Description
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FLANGE MOUNT, R-PSFM-T3
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Pin Count
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2
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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267 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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800 V
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Drain Current-Max (ID)
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7 A
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Drain-source On Resistance-Max
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2 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-247
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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125 W
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Pulsed Drain Current-Max (IDM)
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28 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for 2SK2765-01
This table gives cross-reference parts and alternative options found for 2SK2765-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2765-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFPE40 | Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | 2SK2765-01 vs IRFPE40 |
| BUZ356 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Infineon Technologies AG | 2SK2765-01 vs BUZ356 |
| BUZ356 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | 2SK2765-01 vs BUZ356 |
| STHV82 | 5.5A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | 2SK2765-01 vs STHV82 |
| STW7NA80 | 6.5A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | 2SK2765-01 vs STW7NA80 |