Part Details for 2SK3633(F) by Toshiba America Electronic Components
Overview of 2SK3633(F) by Toshiba America Electronic Components
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for 2SK3633(F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 129 |
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$2.3107 / $3.7470 | Buy Now |
Part Details for 2SK3633(F)
2SK3633(F) CAD Models
2SK3633(F) Part Data Attributes
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2SK3633(F)
Toshiba America Electronic Components
Buy Now
Datasheet
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2SK3633(F)
Toshiba America Electronic Components
TRANSISTOR 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-65 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3633(F)
This table gives cross-reference parts and alternative options found for 2SK3633(F). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3633(F), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 7N80G-TA3-T | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | 2SK3633(F) vs 7N80G-TA3-T |
| 7N80G-TQ2-T | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 2SK3633(F) vs 7N80G-TQ2-T |
| 7N80L-TA3-T | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | 2SK3633(F) vs 7N80L-TA3-T |
| SSP7N80AJ69Z | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | 2SK3633(F) vs SSP7N80AJ69Z |
| 7N80L-TQ2-T | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 2SK3633(F) vs 7N80L-TQ2-T |
| 7N80G-TQ2-R | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 2SK3633(F) vs 7N80G-TQ2-R |