Part Details for 2SK3677-01MR by Fuji Electric Co Ltd
Overview of 2SK3677-01MR by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LPS4414-701MRB | Coilcraft Inc | General Purpose Inductor, 0.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT | |
LPS4414-301MRB | Coilcraft Inc | General Purpose Inductor, 0.3uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT | |
0805USBF-901MRB | Coilcraft Inc | Data Line Filter, 2 Function(s), EIA STD PACKAGE SIZE 0805, SMD, 4 PIN |
Part Details for 2SK3677-01MR
2SK3677-01MR CAD Models
2SK3677-01MR Part Data Attributes
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2SK3677-01MR
Fuji Electric Co Ltd
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Datasheet
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2SK3677-01MR
Fuji Electric Co Ltd
Power Field-Effect Transistor, 12A I(D), 700V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 276.7 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 700 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.93 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK3677-01MR
This table gives cross-reference parts and alternative options found for 2SK3677-01MR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3677-01MR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK4199LS | TRANSISTOR 3 A, 650 V, 3.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI-LS, 3 PIN, FET General Purpose Power | onsemi | 2SK3677-01MR vs 2SK4199LS |
APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | 2SK3677-01MR vs APT5020BVFRG |
2SK3823 | Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | 2SK3677-01MR vs 2SK3823 |
APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | 2SK3677-01MR vs APT5020BVFRG |
APT5020BVR | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | 2SK3677-01MR vs APT5020BVR |
2SK3527-01 | Power Field-Effect Transistor, 21A I(D), 600V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Fuji Electric Co Ltd | 2SK3677-01MR vs 2SK3527-01 |
IXFT36N50P | Power Field-Effect Transistor, 36A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | 2SK3677-01MR vs IXFT36N50P |
2SK3316 | TRANSISTOR 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK3677-01MR vs 2SK3316 |
2SK1395 | Power Field-Effect Transistor, 20A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK3677-01MR vs 2SK1395 |
2SK2198 | Power Field-Effect Transistor, 30A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3L, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK3677-01MR vs 2SK2198 |