Part Details for 2SK3983-01S by Fuji Electric Co Ltd
Overview of 2SK3983-01S by Fuji Electric Co Ltd
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for 2SK3983-01S
2SK3983-01S CAD Models
2SK3983-01S Part Data Attributes
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2SK3983-01S
Fuji Electric Co Ltd
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Datasheet
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2SK3983-01S
Fuji Electric Co Ltd
Power Field-Effect Transistor, 2.6A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 349.1 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 6.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 10.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3983-01S
This table gives cross-reference parts and alternative options found for 2SK3983-01S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3983-01S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STD3NK100Z | N-channel 1000 V, 5.4 Ohm typ., 2.5 A SuperMESH Power MOSFET in a DPAK package | STMicroelectronics | 2SK3983-01S vs STD3NK100Z |
| 2SK3983-01SJ | Power Field-Effect Transistor, 2.6A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(SJ), D2PAK-3 | Fuji Electric Co Ltd | 2SK3983-01S vs 2SK3983-01SJ |
| BUZ50C-E3045 | Power Field-Effect Transistor, 2.3A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Infineon Technologies AG | 2SK3983-01S vs BUZ50C-E3045 |
| BUZ50C-E3045 | Power Field-Effect Transistor, 2.3A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Siemens | 2SK3983-01S vs BUZ50C-E3045 |