Datasheets
2STN2360 by: STMicroelectronics

3A, 60V, PNP, Si, POWER TRANSISTOR, SURFACE MOUNT PACKAGE-3

Part Details for 2STN2360 by STMicroelectronics

Results Overview of 2STN2360 by STMicroelectronics

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2STN2360 Information

2STN2360 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2STN2360

Part # Distributor Description Stock Price Buy
Bristol Electronics   27
RFQ
ComSIT USA LOW VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin RoHS: Compliant Stock DE - 9000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Vyrian PNP, Configuration: SINGLE, Surface Mount: YES, Nominal Transition Frequency (fT): 130 MHz, Maximum Power Dissipation (Abs): 1.6 W, Maximum Collector Current (IC): 3 A, 437
RFQ

Part Details for 2STN2360

2STN2360 CAD Models

2STN2360 Part Data Attributes

2STN2360 STMicroelectronics
Buy Now Datasheet
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2STN2360 STMicroelectronics 3A, 60V, PNP, Si, POWER TRANSISTOR, SURFACE MOUNT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description SURFACE MOUNT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 130 MHz

2STN2360 Related Parts

2STN2360 Frequently Asked Questions (FAQ)

  • The 2STN2360 can operate from -40°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.

  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range (typically 10-15V) and use a suitable gate resistor (RG) to limit the gate current.

  • Use a multi-layer PCB with a solid ground plane, keep the drain and source pins as close as possible, and ensure good thermal conductivity between the device and the heat sink. A thermal pad or thermal interface material can be used to improve heat transfer.

  • Use a voltage regulator or a voltage limiter to prevent overvoltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent. Also, ensure the device is properly heatsinked to prevent thermal runaway.

  • A gate driver IC or a discrete gate drive circuit with a suitable gate resistor (RG) and a gate-source voltage (VGS) within the recommended range can be used. The gate drive circuit should be able to provide a fast rise and fall time to minimize switching losses.

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