Part Details for 30-PT12NMA160SH02-M669F28Y by Vincotech
Overview of 30-PT12NMA160SH02-M669F28Y by Vincotech
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for 30-PT12NMA160SH02-M669F28Y
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
PT12NMA160SH02S
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for 30-PT12NMA160SH02-M669F28Y
30-PT12NMA160SH02-M669F28Y CAD Models
30-PT12NMA160SH02-M669F28Y Part Data Attributes
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30-PT12NMA160SH02-M669F28Y
Vincotech
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Datasheet
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30-PT12NMA160SH02-M669F28Y
Vincotech
Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, MODULE-56
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | VINCOTECH GMBH | |
Package Description | MODULE-56 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 156 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Thr Voltage-Max | 6.3 V | |
JESD-30 Code | R-XUFM-D56 | |
Number of Elements | 4 | |
Number of Terminals | 56 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 398 W | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | SOLDER LUG | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 301.8 ns | |
Turn-on Time-Nom (ton) | 165 ns | |
VCEsat-Max | 2.42 V |