Datasheets
30-PT12NMA160SH02-M669F28Y by: Vincotech

Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, MODULE-56

Part Details for 30-PT12NMA160SH02-M669F28Y by Vincotech

Overview of 30-PT12NMA160SH02-M669F28Y by Vincotech

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Price & Stock for 30-PT12NMA160SH02-M669F28Y

Part # Distributor Description Stock Price Buy
DISTI # PT12NMA160SH02S
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for 30-PT12NMA160SH02-M669F28Y

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30-PT12NMA160SH02-M669F28Y Part Data Attributes

30-PT12NMA160SH02-M669F28Y Vincotech
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30-PT12NMA160SH02-M669F28Y Vincotech Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, MODULE-56
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer VINCOTECH GMBH
Package Description MODULE-56
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 156 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.3 V
JESD-30 Code R-XUFM-D56
Number of Elements 4
Number of Terminals 56
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 398 W
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 301.8 ns
Turn-on Time-Nom (ton) 165 ns
VCEsat-Max 2.42 V

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