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Overview of 3SK295 by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 7 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 3SK295 by Renesas Electronics Corporation
Part Data Attributes for 3SK295 by Renesas Electronics Corporation
|
|
---|---|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
Package Description
|
MPAK-4
|
Pin Count
|
4
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Date Of Intro
|
1997-03-01
|
Case Connection
|
SOURCE
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
12 V
|
Drain Current-Max (ID)
|
0.025 A
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
0.03 pF
|
Highest Frequency Band
|
ULTRA HIGH FREQUENCY BAND
|
JESD-30 Code
|
R-PDSO-G4
|
Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Mode
|
DUAL GATE, DEPLETION MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.15 W
|
Power Gain-Min (Gp)
|
16 dB
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Transistor Application
|
AMPLIFIER
|
Transistor Element Material
|
SILICON
|
Alternate Parts for 3SK295
This table gives cross-reference parts and alternative options found for 3SK295. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 3SK295, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BF1100TRL13 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | NXP Semiconductors | 3SK295 vs BF1100TRL13 |
BF1100R,215 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal | NXP Semiconductors | 3SK295 vs BF1100R,215 |
3SK295 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4 | Hitachi Ltd | 3SK295 vs 3SK295 |
BF1100T/R | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal | NXP Semiconductors | 3SK295 vs BF1100T/R |
BF1100,215 | N-channel dual-gate MOSFET SOT-143 4-Pin | NXP Semiconductors | 3SK295 vs BF1100,215 |
BF1100TRL | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | NXP Semiconductors | 3SK295 vs BF1100TRL |
BF1100WR,115 | N-channel dual-gate MOSFET | NXP Semiconductors | 3SK295 vs BF1100WR,115 |