Datasheets
7N65ZL-TQ2-R by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN

Part Details for 7N65ZL-TQ2-R by Unisonic Technologies Co Ltd

Overview of 7N65ZL-TQ2-R by Unisonic Technologies Co Ltd

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Part Details for 7N65ZL-TQ2-R

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7N65ZL-TQ2-R Part Data Attributes

7N65ZL-TQ2-R Unisonic Technologies Co Ltd
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7N65ZL-TQ2-R Unisonic Technologies Co Ltd Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 7.4 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 142 W
Pulsed Drain Current-Max (IDM) 29.6 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 7N65ZL-TQ2-R

This table gives cross-reference parts and alternative options found for 7N65ZL-TQ2-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 7N65ZL-TQ2-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
7N65ZG-TQ2-R Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N65ZG-TQ2-R
Part Number Description Manufacturer Compare
7N60G-T2Q-T-R Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N60G-T2Q-T-R
7N65ZG-TA3-T Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N65ZG-TA3-T
STP9NK60ZFD 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics 7N65ZL-TQ2-R vs STP9NK60ZFD
7N65ZG-TQ2-R Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N65ZG-TQ2-R
7N60G-TQ2-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N60G-TQ2-T
7N60G-T2Q-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N60G-T2Q-T
7N60ZG-TQ2-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N60ZG-TQ2-T
AP3987P TRANSISTOR 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp 7N65ZL-TQ2-R vs AP3987P
7N60ZL-TA3-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N60ZL-TA3-T
7N60L-T2Q-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Unisonic Technologies Co Ltd 7N65ZL-TQ2-R vs 7N60L-T2Q-T

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