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Power Field-Effect Transistor

Part Details for 934033450115 by Nexperia

Overview of 934033450115 by Nexperia

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Applications Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Part Details for 934033450115

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934033450115 Part Data Attributes

934033450115 Nexperia
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934033450115 Nexperia Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NEXPERIA
Package Description PLASTIC, SMD, SC-73, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Additional Feature FAST SWITCHING
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934033450115

This table gives cross-reference parts and alternative options found for 934033450115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934033450115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934033450135 Power Field-Effect Transistor Nexperia 934033450115 vs 934033450135
BSP250,115 BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin NXP Semiconductors 934033450115 vs BSP250,115
BSP250,135 BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin Nexperia 934033450115 vs BSP250,135
BSP250T/R TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power NXP Semiconductors 934033450115 vs BSP250T/R
BSP250/T3 TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors 934033450115 vs BSP250/T3
BSP250,115 BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin Nexperia 934033450115 vs BSP250,115
BSP250-TAPE-7 TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors 934033450115 vs BSP250-TAPE-7
BSP250 TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power NXP Semiconductors 934033450115 vs BSP250
Part Number Description Manufacturer Compare
NDT452APD84Z Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation 934033450115 vs NDT452APD84Z
NDT452AP Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation 934033450115 vs NDT452AP
934033450135 Power Field-Effect Transistor Nexperia 934033450115 vs 934033450135
FX30ASJ-03 Power Field-Effect Transistor, 30A I(D), 30V, 0.061ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric 934033450115 vs FX30ASJ-03
FDT458P P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ, 4000-REEL onsemi 934033450115 vs FDT458P
FX30ASJ-03 30A, 30V, 0.061ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN Renesas Electronics Corporation 934033450115 vs FX30ASJ-03
NDT456P_NL Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation 934033450115 vs NDT456P_NL
NDT452AP/D84Z 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 Texas Instruments 934033450115 vs NDT452AP/D84Z
NDT456P P-Channel Enhancement Mode Field Effect Transistor, 4000-REEL onsemi 934033450115 vs NDT456P
BSP250 TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power NXP Semiconductors 934033450115 vs BSP250

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