Datasheets
934050390127 by: NXP Semiconductors

TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Part Details for 934050390127 by NXP Semiconductors

Overview of 934050390127 by NXP Semiconductors

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for 934050390127

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934050390127 Part Data Attributes

934050390127 NXP Semiconductors
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934050390127 NXP Semiconductors TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ESD PROTECTION
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19.7 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 79 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934050390127

This table gives cross-reference parts and alternative options found for 934050390127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934050390127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK7575-55,127 BUK7575-55 - N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin Nexperia 934050390127 vs BUK7575-55,127
BUK7575-55 TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors 934050390127 vs BUK7575-55
BUK7575-55A,127 N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin Nexperia 934050390127 vs BUK7575-55A,127
BUK7575-55A TRANSISTOR 20.3 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors 934050390127 vs BUK7575-55A
934056259127 Power Field-Effect Transistor Nexperia 934050390127 vs 934056259127
BUK7575-55A Power Field-Effect Transistor Nexperia 934050390127 vs BUK7575-55A
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens 934050390127 vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation 934050390127 vs HUF76429D3ST
HUF75309P3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation 934050390127 vs HUF75309P3
NTD18N06T4G Power MOSFET 60V 18A 60 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi 934050390127 vs NTD18N06T4G
IRF9Z34NPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG 934050390127 vs IRF9Z34NPBF
BUZ71L 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC 934050390127 vs BUZ71L
BUZ71S2 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens 934050390127 vs BUZ71S2
FQB20N06L Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation 934050390127 vs FQB20N06L
FQD24N08TF Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 934050390127 vs FQD24N08TF
HUF76423D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation 934050390127 vs HUF76423D3ST

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