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Power Field-Effect Transistor

Part Details for 934055766118 by Nexperia

Overview of 934055766118 by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for 934055766118

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934055766118 Part Data Attributes

934055766118 Nexperia
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934055766118 Nexperia Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Avalanche Energy Rating (Eas) 93 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 35 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934055766118

This table gives cross-reference parts and alternative options found for 934055766118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934055766118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHD9NQ20T Power Field-Effect Transistor Nexperia 934055766118 vs PHD9NQ20T
PHD9NQ20T/T3 Power Field-Effect Transistor Nexperia 934055766118 vs PHD9NQ20T/T3
934055766118 TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power NXP Semiconductors 934055766118 vs 934055766118
PHD9NQ20T,118 N-channel TrenchMOS standard level FET DPAK 3-Pin NXP Semiconductors 934055766118 vs PHD9NQ20T,118
PHD9NQ20T/T3 TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power NXP Semiconductors 934055766118 vs PHD9NQ20T/T3
PHD9NQ20T TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power NXP Semiconductors 934055766118 vs PHD9NQ20T
Part Number Description Manufacturer Compare
BSP120TA Power Field-Effect Transistor, 0.25A I(D), 200V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Diodes Incorporated 934055766118 vs BSP120TA
FQD4N20LTF Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 934055766118 vs FQD4N20LTF
2SK2235 TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Toshiba America Electronic Components 934055766118 vs 2SK2235
2SK2046 Power Field-Effect Transistor, 12A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN SANYO Electric Co Ltd 934055766118 vs 2SK2046
BSP297 Power Field-Effect Transistor, 0.6A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens 934055766118 vs BSP297
2SK1335(S)TL Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd 934055766118 vs 2SK1335(S)TL
H5N2004DS-E 8A, 200V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 Renesas Electronics Corporation 934055766118 vs H5N2004DS-E
IRFR211 Power Field-Effect Transistor, 2.7A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor 934055766118 vs IRFR211
2SK215 Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Hitachi Ltd 934055766118 vs 2SK215
FQD10N20L Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 934055766118 vs FQD10N20L

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