Part Details for 934055806118 by NXP Semiconductors
Overview of 934055806118 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 934055806118
934055806118 CAD Models
934055806118 Part Data Attributes
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934055806118
NXP Semiconductors
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Datasheet
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934055806118
NXP Semiconductors
TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 934055806118
This table gives cross-reference parts and alternative options found for 934055806118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934055806118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD30N10S3L34ATMA1 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | 934055806118 vs IPD30N10S3L34ATMA1 |
IRF540NSHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | 934055806118 vs IRF540NSHR |
IRF540NL | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | 934055806118 vs IRF540NL |
HUF75631S3S | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | 934055806118 vs HUF75631S3S |
934055808127 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | 934055806118 vs 934055808127 |
NTE2930 | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | 934055806118 vs NTE2930 |
2SK3647-01 | Power Field-Effect Transistor, 30A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | 934055806118 vs 2SK3647-01 |
IPD30N10S3L-34 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | 934055806118 vs IPD30N10S3L-34 |