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934058279127 by:

Power Field-Effect Transistor

Part Details for 934058279127 by Nexperia

Overview of 934058279127 by Nexperia

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for 934058279127

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934058279127 Part Data Attributes

934058279127 Nexperia
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934058279127 Nexperia Power Field-Effect Transistor
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 560 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 440 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934058279127

This table gives cross-reference parts and alternative options found for 934058279127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934058279127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK769R6-80E Power Field-Effect Transistor Nexperia 934058279127 vs BUK769R6-80E
BUK7609-75A Power Field-Effect Transistor Nexperia 934058279127 vs BUK7609-75A
PHB110NQ08T,118 N-channel TrenchMOS standard level FET D2PAK 3-Pin NXP Semiconductors 934058279127 vs PHB110NQ08T,118
BUK7609-75A,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia 934058279127 vs BUK7609-75A,118
934066648118 75A, 80V, 0.0096ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 Nexperia 934058279127 vs 934066648118
Part Number Description Manufacturer Compare
AUIRFS3607TRL Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG 934058279127 vs AUIRFS3607TRL
IRFSL3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN Infineon Technologies AG 934058279127 vs IRFSL3607PBF
IRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN Infineon Technologies AG 934058279127 vs IRFSL3607
AUIRFR3607TRL Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG 934058279127 vs AUIRFR3607TRL
AUIRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Infineon Technologies AG 934058279127 vs AUIRFSL3607
IRFU3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG 934058279127 vs IRFU3607PBF
IRFB3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG 934058279127 vs IRFB3607PBF
IRFR3607TRRPBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG 934058279127 vs IRFR3607TRRPBF
AUIRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN International Rectifier 934058279127 vs AUIRFSL3607
IRFSL3507PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier 934058279127 vs IRFSL3507PBF

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