Part Details for A3G20S250-01SR3 by NXP Semiconductors
Overview of A3G20S250-01SR3 by NXP Semiconductors
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Transportation and Logistics
Agriculture Technology
Medical Imaging
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Aerospace and Defense
Healthcare
Renewable Energy
Robotics and Drones
Price & Stock for A3G20S250-01SR3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AC7997
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Newark | Airfast Rf Power Gan Transistor, 1800-2200 Mhz, 45 W Avg., 48 V/Reel Rohs Compliant: Yes |Nxp A3G20S250-01SR3 Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
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Rochester Electronics | A3G20S250-01 - Airfast RF Power GaN Transistor RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 39 |
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$79.3900 / $93.4000 | Buy Now |
DISTI #
4275273
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Farnell | RoHS: Compliant Min Qty: 3 Container: Each | 0 |
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$134.6177 | Buy Now |
Part Details for A3G20S250-01SR3
A3G20S250-01SR3 CAD Models
A3G20S250-01SR3 Part Data Attributes
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A3G20S250-01SR3
NXP Semiconductors
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Datasheet
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A3G20S250-01SR3
NXP Semiconductors
RF Power Bipolar Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 26 Weeks | |
Date Of Intro | 2018-10-05 | |
Samacsys Manufacturer | NXP | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 150 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFP-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 225 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 16.5 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM NITRIDE |