Datasheets
AO4612 by: Alpha & Omega Semiconductor

Transistor

Part Details for AO4612 by Alpha & Omega Semiconductor

Overview of AO4612 by Alpha & Omega Semiconductor

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Price & Stock for AO4612

Part # Distributor Description Stock Price Buy
DISTI # 785-1041-1-ND
DigiKey MOSFET N/P-CH 60V 4.5A 8SOIC Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 63297
In Stock
  • 1 $0.8600
  • 10 $0.7420
  • 100 $0.5136
  • 500 $0.4291
  • 1,000 $0.3652
  • 3,000 $0.3253
  • 6,000 $0.3081
  • 9,000 $0.2853
  • 30,000 $0.2825
$0.2825 / $0.8600 Buy Now
DISTI # AO4612
TME Transistor: N/P-MOSFET, unipolar, complementary pair, 60/-60V Min Qty: 1 2841
  • 1 $0.7480
  • 5 $0.3850
  • 25 $0.3420
  • 100 $0.3100
  • 500 $0.2880
$0.2880 / $0.7480 Buy Now
Ameya Holding Limited Transistor: N/P-MOSFET, unipolar, complementary pair, 60/-60V 1240
RFQ
ComSIT USA 60V Complementary Enhancement Mode Field Effect Transistor Power Field-Effect Transistor, 4.5A I(D), 60V, 0.056ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Europe - 534
RFQ
Win Source Electronics MOSFET N/P-CH 60V 8-SOIC 330000
  • 115 $0.4410
  • 280 $0.3620
  • 430 $0.3510
  • 590 $0.3400
  • 765 $0.3280
  • 1,025 $0.2940
$0.2940 / $0.4410 Buy Now

Part Details for AO4612

AO4612 CAD Models

AO4612 Part Data Attributes

AO4612 Alpha & Omega Semiconductor
Buy Now Datasheet
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AO4612 Alpha & Omega Semiconductor Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description SOIC-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 28 ns
Turn-on Time-Max (ton) 11.5 ns

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