Datasheets
AON6500 by: Alpha & Omega Semiconductor

Power Field-Effect Transistor,

Part Details for AON6500 by Alpha & Omega Semiconductor

Overview of AON6500 by Alpha & Omega Semiconductor

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Price & Stock for AON6500

Part # Distributor Description Stock Price Buy
DISTI # 785-1420-1-ND
DigiKey MOSFET N CH 30V 71A DFN5X6 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 23229
In Stock
  • 1 $1.6500
  • 10 $1.3710
  • 100 $1.0911
  • 500 $0.9232
  • 1,000 $0.7834
  • 3,000 $0.7442
  • 6,000 $0.7162
  • 9,000 $0.6925
$0.6925 / $1.6500 Buy Now
DISTI # E02:0323_06070814
Arrow Electronics Trans MOSFET N-CH 30V 200A 8-Pin DFN EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2309 Europe - 27000
  • 3,000 $0.5797
  • 6,000 $0.5647
  • 9,000 $0.5511
$0.5511 / $0.5797 Buy Now
DISTI # V72:2272_07432764
Arrow Electronics Trans MOSFET N-CH 30V 200A 8-Pin DFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2233 Container: Cut Strips Americas - 4
  • 1 $0.7105
$0.7105 Buy Now
DISTI # 19035509
Verical Trans MOSFET N-CH 30V 200A 8-Pin DFN EP T/R Min Qty: 3000 Package Multiple: 3000 Americas - 27000
  • 3,000 $0.5852
  • 6,000 $0.5700
  • 9,000 $0.5563
$0.5563 / $0.5852 Buy Now
DISTI # AON6500
TME Transistor: N-MOSFET, unipolar, 30V, 151A, 33W, DFN5x6 Min Qty: 1 1501
  • 1 $1.0200
  • 5 $0.9100
  • 25 $0.8000
  • 100 $0.7300
  • 500 $0.6700
$0.6700 / $1.0200 Buy Now
CHIPMALL.COM LIMITED 30V 0.95m��@20A,10V 2V@250uA null DFN-8(5x6) MOSFETs ROHS 3722
  • 5 $0.6085
  • 500 $0.5284
$0.5284 / $0.6085 Buy Now

Part Details for AON6500

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AON6500 Part Data Attributes

AON6500 Alpha & Omega Semiconductor
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AON6500 Alpha & Omega Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 200 A
Drain-source On Resistance-Max 0.0013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 353 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 450 A
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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