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Part Details for AONR21357 by Alpha & Omega Semiconductor
Results Overview of AONR21357 by Alpha & Omega Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AONR21357 Information
AONR21357 by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AONR21357
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | MOSFET P-CH 30V 21A/34A 8DFN / P-Channel 30 V 21A (Ta), 34A (Tc) 5W (Ta), 30W (Tc) Surface Mount 8-DFN-EP (3x3) | 57911 |
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$0.1175 / $0.1517 | Buy Now |
Part Details for AONR21357
AONR21357 CAD Models
AONR21357 Part Data Attributes
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AONR21357
Alpha & Omega Semiconductor
Buy Now
Datasheet
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AONR21357
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 34A I(D), 30V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DFN 3X3_EP, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Dfn 3x3_ep, 8 Pin | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 76 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.0078 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Square | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | P-Channel | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Surface Mount | Yes | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for AONR21357
This table gives cross-reference parts and alternative options found for AONR21357. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AONR21357, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7101DN-T1-GE3 | Vishay Intertechnologies | $0.2548 | Power Field-Effect Transistor, 35A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | AONR21357 vs SI7101DN-T1-GE3 |
AONR21357 Frequently Asked Questions (FAQ)
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AONR21357 requires a thermal pad on the bottom of the package. A recommended PCB layout includes a solid copper plane on the top and bottom layers, with thermal vias connecting the two layers to dissipate heat efficiently.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, including a proper heat sink design, and to derate the device's power handling according to the temperature derating curve provided in the datasheet.
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Alpha & Omega Semiconductor recommends following the ESD protection guidelines outlined in the datasheet, including the use of ESD protection devices, such as TVS diodes, and proper PCB layout and handling practices to prevent ESD damage.
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Yes, the AONR21357 is suitable for high-frequency switching applications. However, it's essential to follow the recommended layout and design guidelines to minimize parasitic inductance and ensure optimal performance.
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To troubleshoot and debug issues with the AONR21357, follow a systematic approach, including checking the power supply, input signals, and output waveforms. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue, and consult the datasheet and application notes for guidance.