Datasheets
AOTF5B60D by: Alpha & Omega Semiconductor

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel

Part Details for AOTF5B60D by Alpha & Omega Semiconductor

Overview of AOTF5B60D by Alpha & Omega Semiconductor

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Price & Stock for AOTF5B60D

Part # Distributor Description Stock Price Buy
DISTI # AOTF5B60D-ND
DigiKey IGBT 600V 10A 31.2W TO220F Min Qty: 1000 Lead time: 22 Weeks Container: Tube Limited Supply - Call
  • 1,000 $0.7308
$0.7308 Buy Now
DISTI # AOTF5B60D
TME Transistor: IGBT, 600V, 5A, 12.5W, TO220F, Eoff: 0.04mJ, Eon: 0.14mJ Min Qty: 1 334
  • 1 $0.5400
  • 5 $0.5040
  • 25 $0.5000
$0.5000 / $0.5400 Buy Now
ComSIT USA 600V, 5A ALPHA IGBT WITH DIODE Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant Europe - 1000
RFQ

Part Details for AOTF5B60D

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AOTF5B60D Part Data Attributes

AOTF5B60D Alpha & Omega Semiconductor
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AOTF5B60D Alpha & Omega Semiconductor Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31.2 W
Surface Mount NO

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