Part Details for AP4501GM by Advanced Power Electronics Corp
Overview of AP4501GM by Advanced Power Electronics Corp
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for AP4501GM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 20100 |
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Part Details for AP4501GM
AP4501GM CAD Models
AP4501GM Part Data Attributes
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AP4501GM
Advanced Power Electronics Corp
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Datasheet
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AP4501GM
Advanced Power Electronics Corp
TRANSISTOR 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AP4501GM
This table gives cross-reference parts and alternative options found for AP4501GM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP4501GM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AP4503AGM-HF | TRANSISTOR 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | AP4501GM vs AP4503AGM-HF |
| AP4501GD | TRANSISTOR 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, DIP-8, FET General Purpose Power | Advanced Power Electronics Corp | AP4501GM vs AP4501GD |
| FDS8958AD84Z | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | AP4501GM vs FDS8958AD84Z |
| SSF4604 | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SOP-8 | Suzhou Good-Ark Electronics Co Ltd | AP4501GM vs SSF4604 |
| AF8510CS | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Integrated Circuit Technology Corp | AP4501GM vs AF8510CS |
| ELM14606AA-N | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ELM Technology Corp | AP4501GM vs ELM14606AA-N |
| TSM4539DCSRLG | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Taiwan Semiconductor | AP4501GM vs TSM4539DCSRLG |
| AP4501AGM | TRANSISTOR 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | AP4501GM vs AP4501AGM |
| SP8M10FRATB | Power Field-Effect Transistor, 7A I(D), 30V, 0.037ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ROHM Semiconductor | AP4501GM vs SP8M10FRATB |
| AF8958CN | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8 | Integrated Circuit Technology Corp | AP4501GM vs AF8958CN |