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APT35GN120SG by:

Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel

Part Details for APT35GN120SG by Microsemi Corporation

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Part Details for APT35GN120SG

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APT35GN120SG Part Data Attributes

APT35GN120SG Microsemi Corporation
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APT35GN120SG Microsemi Corporation Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 94 A
Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 30 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 379 W
Surface Mount YES

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