There are no models available for this part yet.
Overview of APT5012JN by Advanced Power Technology
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for APT5012JN by Advanced Power Technology
Part Data Attributes for APT5012JN by Advanced Power Technology
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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ADVANCED POWER TECHNOLOGY INC
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Package Description
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ISOTOP-4
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Case Connection
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ISOLATED
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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500 V
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Drain Current-Max (ID)
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43 A
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Drain-source On Resistance-Max
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0.12 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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660 pF
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JESD-30 Code
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R-PUFM-X4
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Number of Elements
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1
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Number of Terminals
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4
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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520 W
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Power Dissipation-Max (Abs)
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520 W
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Pulsed Drain Current-Max (IDM)
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172 A
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Qualification Status
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Not Qualified
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Reference Standard
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UL RECOGNIZED
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Surface Mount
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NO
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Terminal Form
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UNSPECIFIED
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Terminal Position
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UPPER
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
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100 ns
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Turn-on Time-Max (ton)
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80 ns
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Alternate Parts for APT5012JN
This table gives cross-reference parts and alternative options found for APT5012JN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5012JN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFE44N50Q | Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | APT5012JN vs IXFE44N50Q |
| IXFN48N50U2 | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JN vs IXFN48N50U2 |
| IXTN79N20 | Power Field-Effect Transistor, 79A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | APT5012JN vs IXTN79N20 |
| IXTN58N50 | Power Field-Effect Transistor, 58A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JN vs IXTN58N50 |
| APT50M60JN | Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT5012JN vs APT50M60JN |
| IXFE48N50QD3 | Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | APT5012JN vs IXFE48N50QD3 |
| APT5012JNU2 | 43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | APT5012JN vs APT5012JNU2 |
| APT5010JN | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT5012JN vs APT5010JN |
| IXFN80N50Q3 | Power Field-Effect Transistor, 63A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JN vs IXFN80N50Q3 |
| IXFN100N20 | Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | APT5012JN vs IXFN100N20 |