Part Details for APT5012JNU2 by Advanced Power Technology
Overview of APT5012JNU2 by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for APT5012JNU2
APT5012JNU2 CAD Models
APT5012JNU2 Part Data Attributes
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APT5012JNU2
Advanced Power Technology
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Datasheet
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APT5012JNU2
Advanced Power Technology
Power Field-Effect Transistor, 43A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PUFM-D4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | BUILT IN ULTRAFAST DIODE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 660 pF | |
| JESD-30 Code | R-PUFM-D4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 520 W | |
| Power Dissipation-Max (Abs) | 520 W | |
| Pulsed Drain Current-Max (IDM) | 172 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for APT5012JNU2
This table gives cross-reference parts and alternative options found for APT5012JNU2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5012JNU2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN100N20 | Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | APT5012JNU2 vs IXFN100N20 |
| IXFN44N50U2 | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JNU2 vs IXFN44N50U2 |
| IXFN48N50Q | Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | APT5012JNU2 vs IXFN48N50Q |
| IXTN61N50 | Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JNU2 vs IXTN61N50 |
| BUK581-60A | TRANSISTOR 1.5 A, 60 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | APT5012JNU2 vs BUK581-60A |
| APT50M60JN | Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT5012JNU2 vs APT50M60JN |
| APT5010JN | 48A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | APT5012JNU2 vs APT5010JN |
| IXFN36N60 | Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | APT5012JNU2 vs IXFN36N60 |
| IXTN36N50 | Power Field-Effect Transistor, 36A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | APT5012JNU2 vs IXTN36N50 |
| BUK417-500BE | TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | APT5012JNU2 vs BUK417-500BE |