Part Details for APT5012JNU3 by Advanced Power Technology
Overview of APT5012JNU3 by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for APT5012JNU3
APT5012JNU3 CAD Models
APT5012JNU3 Part Data Attributes
|
|
APT5012JNU3
Advanced Power Technology
Buy Now
Datasheet
|
Compare Parts:
APT5012JNU3
Advanced Power Technology
Power Field-Effect Transistor, 43A I(D), 1000V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PUFM-D4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | MOTOR DRIVE BUCK CONFIGURATION | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-D4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 520 W | |
| Power Dissipation-Max (Abs) | 520 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON |
Alternate Parts for APT5012JNU3
This table gives cross-reference parts and alternative options found for APT5012JNU3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5012JNU3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFE44N50Q | Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | APT5012JNU3 vs IXFE44N50Q |
| IXFN48N50U2 | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JNU3 vs IXFN48N50U2 |
| IXTN79N20 | Power Field-Effect Transistor, 79A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | APT5012JNU3 vs IXTN79N20 |
| IXTN58N50 | Power Field-Effect Transistor, 58A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JNU3 vs IXTN58N50 |
| APT50M60JN | Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT5012JNU3 vs APT50M60JN |
| IXFE48N50QD3 | Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | APT5012JNU3 vs IXFE48N50QD3 |
| APT5012JNU2 | 43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | APT5012JNU3 vs APT5012JNU2 |
| APT5010JN | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT5012JNU3 vs APT5010JN |
| IXFN80N50Q3 | Power Field-Effect Transistor, 63A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5012JNU3 vs IXFN80N50Q3 |
| IXFN100N20 | Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | APT5012JNU3 vs IXFN100N20 |