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Transistors Power Field-Effect Transistors APT5015BVR

APT5015BVR
Description: Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Overview of APT5015BVR by Microsemi Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

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Part Data Attributes for APT5015BVR by Microsemi Corporation
Parametric Data

APT5015BVR
Microsemi Corporation
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Reach Compliance Code
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
1300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
32 A
Drain-source On Resistance-Max
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
128 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. APT5015BVR
    Microsemi Corporation
    Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    VS

Alternate Parts for APT5015BVR

This table gives cross-reference parts and alternative options found for APT5015BVR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5015BVR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
APT5015BVFR Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT5015BVR vs APT5015BVFR
APT5015BVRG Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc APT5015BVR vs APT5015BVRG
Part Number Description Manufacturer Compare
APT6030BVFRG Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT5015BVR vs APT6030BVFRG
APT5020SLC 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 Microsemi Corporation APT5015BVR vs APT5020SLC
IXFJ32N50Q Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, I3PAK-3 IXYS Corporation APT5015BVR vs IXFJ32N50Q
APT6029SFLLG Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation APT5015BVR vs APT6029SFLLG
IXFH26N49Q Power Field-Effect Transistor, 26A I(D), 490V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc APT5015BVR vs IXFH26N49Q
SIHG32N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix APT5015BVR vs SIHG32N50D-E3
IXFH30N50S Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXYS Corporation APT5015BVR vs IXFH30N50S
IXTT28N50Q Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation APT5015BVR vs IXTT28N50Q
IXTH30N45S Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN IXYS Corporation APT5015BVR vs IXTH30N45S
IXFT32N50Q Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation APT5015BVR vs IXFT32N50Q

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