Part Details for APT94N65B2C3G by Microsemi Corporation
Overview of APT94N65B2C3G by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for APT94N65B2C3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
150-APT94N65B2C3G-ND
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DigiKey | MOSFET N-CH 650V 94A T-MAX Lead time: 52 Weeks Container: Tube | Temporarily Out of Stock |
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Part Details for APT94N65B2C3G
APT94N65B2C3G CAD Models
APT94N65B2C3G Part Data Attributes
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APT94N65B2C3G
Microsemi Corporation
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Datasheet
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APT94N65B2C3G
Microsemi Corporation
Power Field-Effect Transistor, 94A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, TMAX-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 1800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 94 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 415 W | |
| Pulsed Drain Current-Max (IDM) | 282 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for APT94N65B2C3G
This table gives cross-reference parts and alternative options found for APT94N65B2C3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT94N65B2C3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT94N65B2C3 | Power Field-Effect Transistor, 94A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Microsemi Corporation | APT94N65B2C3G vs APT94N65B2C3 |