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Transistors Power Field-Effect Transistors APT9F100B

APT9F100B
Description: Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Overview of APT9F100B by Microchip Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for APT9F100B by Microchip Technology Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 78AH6275
Newark Fredfet Mos8 1000 V 9 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT9F100B RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $4.8800
  • 250 $4.7000
  • 500 $4.5800
$4.5800 / $4.8800 Buy Now
DISTI # APT9F100B-ND
DigiKey MOSFET N-CH 1000V 9A TO247 Min Qty: 100 Lead time: 32 Weeks Container: Tube Temporarily Out of Stock
  • 100 $4.6000
$4.6000 Buy Now
DISTI # APT9F100B
Avnet Americas Trans MOSFET N-CH 1KV 9A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT9F100B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 32 Weeks, 0 Days Container: Tube 0
  • 1 $5.6400
  • 100 $4.8800
  • 250 $4.7000
  • 500 $4.5800
$4.5800 / $5.6400 Buy Now
DISTI # 494-APT9F100B
Mouser Electronics MOSFETs FREDFET MOS8 1000 V 9 A TO-247 RoHS: Compliant 0
  • 1 $5.6400
  • 100 $4.8800
$4.8800 / $5.6400 Order Now
DISTI # APT9F100B
Microchip Technology Inc FREDFET MOS 8 1000 V 9 A TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $5.6400
  • 100 $4.8800
  • 250 $4.7000
  • 500 $4.5800
  • 1,000 $4.4700
  • 5,000 $4.3200
$4.3200 / $5.6400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 0
  • 100 $4.9100
$4.9100 Buy Now
Onlinecomponents.com   RoHS: Compliant 11721 Factory Stock
  • 5 $5.5800
  • 25 $5.2600
  • 100 $4.9000
  • 250 $4.7700
  • 500 $4.5900
  • 1,000 $4.5200
  • 2,500 $4.4500
  • 5,000 $4.3800
$4.3800 / $5.5800 Buy Now
DISTI # APT9F100B
TME Transistor: N-MOSFET, unipolar, 1kV, 5A, Idm: 37A, 337W, TO247-3 Min Qty: 1 0
  • 1 $8.2200
  • 3 $7.3900
  • 10 $6.5300
$6.5300 / $8.2200 RFQ
NAC FG, FREDFET, 1000V, TO-247 RoHS: Compliant Min Qty: 67 Package Multiple: 1 Container: Tube 0
  • 1 $5.4100
  • 100 $4.9100
  • 500 $4.6000
  • 1,000 $4.4900
$4.4900 / $5.4100 Buy Now
DISTI # APT9F100B
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 100 0
  • 100 $4.8600
$4.8600 Buy Now
DISTI # APT9F100B
Avnet Silica Trans MOSFET N-CH 1KV 9A 3-Pin(3+Tab) TO-247 (Alt: APT9F100B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 34 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT9F100B
EBV Elektronik Trans MOSFET N-CH 1KV 9A 3-Pin(3+Tab) TO-247 (Alt: APT9F100B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 33 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 11721 Factory Stock
  • 5 $5.5800
  • 25 $5.2600
  • 100 $4.9000
  • 250 $4.7700
  • 500 $4.5900
  • 1,000 $4.5200
  • 2,500 $4.4500
  • 5,000 $4.3800
$4.3800 / $5.5800 Buy Now

CAD Models for APT9F100B by Microchip Technology Inc
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Part Data Attributes for APT9F100B by Microchip Technology Inc
Parametric Data

APT9F100B
Microchip Technology Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
32 Weeks
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
574 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
9 A
Drain-source On Resistance-Max
1.7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
37 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. APT9F100B
    Microchip Technology Inc
    Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    VS

Alternate Parts for APT9F100B

This table gives cross-reference parts and alternative options found for APT9F100B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT9F100B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXFV10N100PS Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXYS Corporation APT9F100B vs IXFV10N100PS
APT9M100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation APT9F100B vs APT9M100B
IXFV10N100P Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation APT9F100B vs IXFV10N100P
IXFH10N100P Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN IXYS Corporation APT9F100B vs IXFH10N100P
IXTH10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation APT9F100B vs IXTH10N100D2
IXTT10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation APT9F100B vs IXTT10N100D2
APT9F100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation APT9F100B vs APT9F100B
IXTH10N100D Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation APT9F100B vs IXTH10N100D
IXTH10N100D Power Field-Effect Transistor, Littelfuse Inc APT9F100B vs IXTH10N100D
IXTT10N100D Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation APT9F100B vs IXTT10N100D

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