Part Details for APT9M100S by Microchip Technology Inc
Overview of APT9M100S by Microchip Technology Inc
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for APT9M100S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6277
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Newark | Mosfet Mos8 1000 V 9 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT9M100S Min Qty: 90 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.8200 / $5.9400 | Buy Now |
DISTI #
150-APT9M100S-ND
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DigiKey | MOSFET N-CH 1000V 9A D3PAK Min Qty: 1 Lead time: 26 Weeks Container: Tube |
122 In Stock |
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$5.1300 / $5.9400 | Buy Now |
DISTI #
APT9M100S/TR
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Avnet Americas | Trans MOSFET N-CH 1000V 9A 3-Pin D3PAK - Tape and Reel (Alt: APT9M100S/TR) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Container: Reel | 0 |
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$5.6300 / $6.9400 | Buy Now |
DISTI #
APT9M100S
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Avnet Americas | Trans MOSFET N-CH 1000V 9A 3-Pin D3PAK - Rail/Tube (Alt: APT9M100S) RoHS: Compliant Min Qty: 90 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube | 0 |
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$4.8200 / $5.9400 | Buy Now |
DISTI #
494-APT9M100S
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Mouser Electronics | MOSFET MOSFET MOS8 1000 V 9 A TO-268 RoHS: Compliant | 20 |
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$5.1300 / $5.9400 | Buy Now |
DISTI #
APT9M100S
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Microchip Technology Inc | MOSFET MOS8 1000 V 9 A TO-268, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$4.5600 / $5.9400 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 90 Package Multiple: 1 | 0 |
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$5.1500 | Buy Now |
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Onlinecomponents.com | 0 |
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$4.6000 / $5.8600 | Buy Now | |
DISTI #
APT9M100S
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TME | Transistor: N-MOSFET, unipolar, 1kV, 6A, Idm: 37A, 335W, D3PAK Min Qty: 1 | 0 |
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$6.8500 / $8.6100 | RFQ |
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NAC | FG, MOSFET, 1000V, TO-268 RoHS: Compliant Min Qty: 64 Package Multiple: 1 Container: Tube | 0 |
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$4.7100 / $5.6800 | Buy Now |
Part Details for APT9M100S
APT9M100S CAD Models
APT9M100S Part Data Attributes:
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APT9M100S
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT9M100S
Microchip Technology Inc
Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | D3PAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 575 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 335 W | |
Pulsed Drain Current-Max (IDM) | 37 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Pure Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APT9M100S
This table gives cross-reference parts and alternative options found for APT9M100S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT9M100S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT9M100B | Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | APT9M100S vs APT9M100B |
IXFH10N100P | Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN | IXYS Corporation | APT9M100S vs IXFH10N100P |
IXTH10N100D2 | Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | APT9M100S vs IXTH10N100D2 |
IXTT10N100D2 | Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | APT9M100S vs IXTT10N100D2 |
APT9F100B | Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | APT9M100S vs APT9F100B |
IXTH10N100D | Power Field-Effect Transistor, | Littelfuse Inc | APT9M100S vs IXTH10N100D |
IXTT10N100D2 | Power Field-Effect Transistor, | Littelfuse Inc | APT9M100S vs IXTT10N100D2 |
IXTT10N100D | Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | APT9M100S vs IXTT10N100D |