Datasheets
ARF463AP1G by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

Part Details for ARF463AP1G by Microsemi Corporation

Overview of ARF463AP1G by Microsemi Corporation

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Applications Consumer Electronics Security and Surveillance Internet of Things (IoT) Audio and Video Systems Computing and Data Storage Financial Technology (Fintech) Smart Cities Telecommunications Communication and Networking Automotive

Part Details for ARF463AP1G

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ARF463AP1G Part Data Attributes

ARF463AP1G Microsemi Corporation
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ARF463AP1G Microsemi Corporation RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code TO-247AD
Package Description ROHS COMPLIANT, TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 9 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for ARF463AP1G

This table gives cross-reference parts and alternative options found for ARF463AP1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ARF463AP1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ARF463AP1G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc ARF463AP1G vs ARF463AP1G
Part Number Description Manufacturer Compare
ARF449AG RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc ARF463AP1G vs ARF449AG
ARF463B RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, Microsemi Corporation ARF463AP1G vs ARF463B
ARF463BP1G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation ARF463AP1G vs ARF463BP1G
ARF463BP1G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc ARF463AP1G vs ARF463BP1G
ARF463AP1G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc ARF463AP1G vs ARF463AP1G
ARF463BP1 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation ARF463AP1G vs ARF463BP1

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