Datasheets
AUIRF2903Z by:

Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for AUIRF2903Z by Infineon Technologies AG

Overview of AUIRF2903Z by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for AUIRF2903Z

Part # Distributor Description Stock Price Buy
DISTI # AUIRF2903Z
Avnet Americas Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: AUIRF2903Z) RoHS: Compliant Min Qty: 173 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 2150 Partner Stock
  • 173 $2.0735
  • 180 $2.0445
  • 350 $2.0300
  • 870 $1.9720
  • 1,800 $1.9285
  • 8,700 $1.8705
  • 18,000 $1.8415
$1.8415 / $2.0735 Buy Now

Part Details for AUIRF2903Z

AUIRF2903Z CAD Models

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AUIRF2903Z Part Data Attributes

AUIRF2903Z Infineon Technologies AG
Buy Now Datasheet
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AUIRF2903Z Infineon Technologies AG Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 820 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 290 W
Pulsed Drain Current-Max (IDM) 1020 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF2903Z

This table gives cross-reference parts and alternative options found for AUIRF2903Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF2903Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF2903ZPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF2903Z vs IRF2903ZPBF
Part Number Description Manufacturer Compare
IRF2903ZPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF2903Z vs IRF2903ZPBF

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