Datasheets
AUIRF3205ZS by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

Part Details for AUIRF3205ZS by International Rectifier

Overview of AUIRF3205ZS by International Rectifier

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for AUIRF3205ZS

Part # Distributor Description Stock Price Buy
DISTI # 2156-AUIRF3205ZS-ND
DigiKey MOSFET N-CH 55V 75A D2PAK Min Qty: 237 Container: Bulk MARKETPLACE PRODUCT 1357
In Stock
  • 237 $1.2700
$1.2700 Buy Now
Rochester Electronics AUIRF3205ZS - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 1357
  • 1 $1.2800
  • 25 $1.2600
  • 100 $1.2000
  • 500 $1.1500
  • 1,000 $1.0900
$1.0900 / $1.2800 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant Europe - 10
RFQ

Part Details for AUIRF3205ZS

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AUIRF3205ZS Part Data Attributes

AUIRF3205ZS International Rectifier
Buy Now Datasheet
Compare Parts:
AUIRF3205ZS International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description ROHS COMPLIANT, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 440 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF3205ZS

This table gives cross-reference parts and alternative options found for AUIRF3205ZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3205ZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRF3205ZSTRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier AUIRF3205ZS vs AUIRF3205ZSTRL
IRF3205ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3205ZS vs IRF3205ZSTRLPBF
Part Number Description Manufacturer Compare
AUIRF3205ZSTRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier AUIRF3205ZS vs AUIRF3205ZSTRL
IRF3205ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3205ZS vs IRF3205ZSTRLPBF

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