Datasheets
AUIRF7304QTR by:

Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

Part Details for AUIRF7304QTR by Infineon Technologies AG

Overview of AUIRF7304QTR by Infineon Technologies AG

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Price & Stock for AUIRF7304QTR

Part # Distributor Description Stock Price Buy
DISTI # AUIRF7304QTR-ND
DigiKey MOSFET 2P-CH 20V 4.3A 8SOIC Lead time: 39 Weeks Container: Tape & Reel (TR) Limited Supply - Call
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DISTI # AUIRF7304QTR
Avnet Americas Transistor MOSFET Array Dual P-CH 20V 4.7A 8-Pin SOIC T/R - Tape and Reel (Alt: AUIRF7304QTR) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel 0
RFQ
DISTI # SP001515778
EBV Elektronik Transistor MOSFET Array Dual P-CH 20V 4.7A 8-Pin SOIC T/R (Alt: SP001515778) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 11 Weeks, 0 Days EBV - 0
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Part Details for AUIRF7304QTR

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AUIRF7304QTR Part Data Attributes

AUIRF7304QTR Infineon Technologies AG
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AUIRF7304QTR Infineon Technologies AG Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 17 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF7304QTR

This table gives cross-reference parts and alternative options found for AUIRF7304QTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7304QTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRF7304Q Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier AUIRF7304QTR vs AUIRF7304Q
Part Number Description Manufacturer Compare
AUIRF7304Q Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier AUIRF7304QTR vs AUIRF7304Q

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