Part Details for AUIRF7316QTR by Infineon Technologies AG
Results Overview of AUIRF7316QTR by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
AUIRF7316QTR Information
AUIRF7316QTR by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF7316QTR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2725789RL
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Farnell | MOSFET, AEC-Q101, DUAL P-CH, SOIC-8 COO: MY RoHS: Compliant Min Qty: 5 Lead time: 27 Weeks, 1 Days Container: Reel | 5 |
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$4.1849 | Buy Now |
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DISTI #
2725789
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Farnell | MOSFET, AEC-Q101, DUAL P-CH, SOIC-8 COO: MY RoHS: Compliant Min Qty: 5 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 5 |
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$4.1849 | Buy Now |
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DISTI #
4319058
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Farnell | MOSFET, P-CH, 30V, 4.9A, SOIC COO: MY RoHS: Compliant Min Qty: 4000 Lead time: 27 Weeks, 1 Days Container: Reel | 0 |
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$1.5002 / $1.5266 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 20971 |
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$1.2400 / $1.5500 | Buy Now |
Part Details for AUIRF7316QTR
AUIRF7316QTR CAD Models
AUIRF7316QTR Part Data Attributes
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AUIRF7316QTR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRF7316QTR
Infineon Technologies AG
Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Rohs Compliant, Sop-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | Avalanche Rated, High Reliability, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 140 Mj | |
| Configuration | Separate, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.9 A | |
| Drain-source On Resistance-Max | 0.058 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for AUIRF7316QTR
This table gives cross-reference parts and alternative options found for AUIRF7316QTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7316QTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7316PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | AUIRF7316QTR vs IRF7316PBF |
| IRF7316TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | AUIRF7316QTR vs IRF7316TR |
| IRF7316QTRPBF | Infineon Technologies AG | Check for Price | Transistor, | AUIRF7316QTR vs IRF7316QTRPBF |
| IRF7316 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | AUIRF7316QTR vs IRF7316 |
AUIRF7316QTR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the AUIRF7316QTR is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and optimizing the PCB design for heat dissipation.
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The recommended gate drive voltage for the AUIRF7316QTR is between 10V and 15V, with a maximum voltage of 20V.
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To protect the AUIRF7316QTR from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB design includes ESD protection circuits.
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The maximum allowable current for the AUIRF7316QTR is 16A, with a maximum pulsed current of 32A.