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Part Details for AUIRF7759L2TR by Infineon Technologies AG
Results Overview of AUIRF7759L2TR by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (8 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AUIRF7759L2TR Information
AUIRF7759L2TR by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF7759L2TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2579960
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Farnell | MOSFET, N-CH, 75V, 160A, DIRECTFET L8 COO: MX RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Cut Tape | 6195 |
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$5.1986 / $6.5542 | Buy Now |
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DISTI #
2579960RL
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Farnell | MOSFET, N-CH, 75V, 160A, DIRECTFET L8 COO: MX RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel | 6195 |
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$5.1986 / $5.3039 | Buy Now |
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DISTI #
AUIRF7759L2TR
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Avnet Americas | Trans MOSFET N-CH 75V 160A 15-Pin Direct-FET L8 T/R - Tape and Reel (Alt: AUIRF7759L2TR) COO: Mexico RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$4.9942 / $5.7611 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 26A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 | 25859 |
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$3.9400 / $4.9300 | Buy Now |
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DISTI #
AUIRF7759L2TR
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2645 |
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$4.2500 | Buy Now |
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Chip Stock | PowerField-EffectTransistor,375AI(D),1-Element,N-Channel,Metal-oxideSemiconductorFET | 9167 |
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RFQ | |
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DISTI #
SP001517184
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EBV Elektronik | Trans MOSFET NCH 75V 160A 15Pin DirectFET L8 TR (Alt: SP001517184) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 75V 160A 2.3m10V96A 125W 4V 1 N-Channel DirectFET Single FETs MOSFETs RoHS | 1 |
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$7.7094 / $10.9380 | Buy Now |
Part Details for AUIRF7759L2TR
AUIRF7759L2TR CAD Models
AUIRF7759L2TR Part Data Attributes
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AUIRF7759L2TR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRF7759L2TR
Infineon Technologies AG
Power Field-Effect Transistor, 26A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 257 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N9 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 9 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 640 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF7759L2TR
This table gives cross-reference parts and alternative options found for AUIRF7759L2TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7759L2TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7779L2TRPBF | Infineon Technologies AG | $2.2811 | Power Field-Effect Transistor, 11A I(D), 150V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | AUIRF7759L2TR vs IRF7779L2TRPBF |
| IRF7759L2TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 26A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | AUIRF7759L2TR vs IRF7759L2TRPBF |
| IRF7759L2TR1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 26A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | AUIRF7759L2TR vs IRF7759L2TR1PBF |
| IRF7759L2TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 26A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | AUIRF7759L2TR vs IRF7759L2TRPBF |
| AUIRF7759L2TR | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | AUIRF7759L2TR vs AUIRF7759L2TR |
| IRF7749L2TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 33A I(D), 60V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | AUIRF7759L2TR vs IRF7749L2TRPBF |
| AUIRF7759L2TR1 | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | AUIRF7759L2TR vs AUIRF7759L2TR1 |
| IRF7779L2TR1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 150V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | AUIRF7759L2TR vs IRF7779L2TR1PBF |
AUIRF7759L2TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the AUIRF7759L2TR is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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Infineon provides a reference design and layout guidelines in the application note AN2019-01, which should be followed to ensure optimal thermal performance and minimize electromagnetic interference (EMI).
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To protect the device from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the PCB is properly grounded. Additionally, follow proper soldering and handling procedures to prevent damage.
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Infineon recommends using a dedicated gate driver IC, such as the Infineon 1EDF7171B, and following the recommended circuit topology and component selection guidelines outlined in the application note AN2019-01.