Part Details for AUIRFS3306 by Infineon Technologies AG
Overview of AUIRFS3306 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Price & Stock for AUIRFS3306
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRFS3306
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Avnet Americas | Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK Tube - Rail/Tube (Alt: AUIRFS3306) RoHS: Compliant Min Qty: 3000 Package Multiple: 50 Container: Tube | 0 |
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RFQ | |
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DISTI #
SP001517554
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EBV Elektronik | Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK Tube (Alt: SP001517554) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRFS3306
AUIRFS3306 CAD Models
AUIRFS3306 Part Data Attributes
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AUIRFS3306
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRFS3306
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 184 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 620 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRFS3306
This table gives cross-reference parts and alternative options found for AUIRFS3306. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFS3306, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFS3306TRR | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | AUIRFS3306 vs AUIRFS3306TRR |
| AUIRFS3306TRL | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | AUIRFS3306 vs AUIRFS3306TRL |
| IRFS3306PBF | Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | AUIRFS3306 vs IRFS3306PBF |
| IRFS3306TRRPBF | Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | AUIRFS3306 vs IRFS3306TRRPBF |