Datasheets
AUIRFS4115TRL by:

Power Field-Effect Transistor,

Part Details for AUIRFS4115TRL by Infineon Technologies AG

Overview of AUIRFS4115TRL by Infineon Technologies AG

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Price & Stock for AUIRFS4115TRL

Part # Distributor Description Stock Price Buy
DISTI # AUIRFS4115TRL-ND
DigiKey MOSFET N-CH 150V 99A D2PAK Min Qty: 800 Lead time: 12 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 800 $3.7431
$3.7431 Buy Now
DISTI # AUIRFS4115TRL
Avnet Americas Trans MOSFET N-CH 150V 99A 3-Pin D2PAK T/R - Tape and Reel (Alt: AUIRFS4115TRL) RoHS: Compliant Min Qty: 84 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 650 Partner Stock
  • 84 $4.2757
  • 90 $4.2159
  • 170 $4.1860
  • 420 $4.0664
  • 840 $3.9767
  • 4,200 $3.8571
  • 8,400 $3.7973
$3.7973 / $4.2757 Buy Now
DISTI # AUIRFS4115TRL
Avnet Americas Trans MOSFET N-CH 150V 99A 3-Pin D2PAK T/R - Tape and Reel (Alt: AUIRFS4115TRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-AUIRFS4115TRL
Mouser Electronics MOSFETs N RoHS: Compliant 470
  • 1 $7.1900
  • 10 $6.1600
  • 25 $5.5900
  • 100 $5.1400
  • 250 $4.8300
  • 500 $4.5300
  • 800 $3.7400
$3.7400 / $7.1900 Buy Now
Rochester Electronics AUIRFS4115 - 120V-300V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 650
  • 1 $4.3700
  • 25 $4.2800
  • 100 $4.1100
  • 500 $3.9300
  • 1,000 $3.7100
$3.7100 / $4.3700 Buy Now
DISTI # SP001518088
EBV Elektronik Trans MOSFET N-CH 150V 99A 3-Pin D2PAK T/R (Alt: SP001518088) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for AUIRFS4115TRL

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AUIRFS4115TRL Part Data Attributes

AUIRFS4115TRL Infineon Technologies AG
Buy Now Datasheet
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AUIRFS4115TRL Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description D2PAK-3/2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW ON RESISTANCE
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 99 A
Drain-source On Resistance-Max 0.0121 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 105 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 396 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFS4115TRL

This table gives cross-reference parts and alternative options found for AUIRFS4115TRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFS4115TRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRFS4115 Power Field-Effect Transistor, Infineon Technologies AG AUIRFS4115TRL vs AUIRFS4115
AUIRFS4115 Power Field-Effect Transistor International Rectifier AUIRFS4115TRL vs AUIRFS4115
IRFS4115 Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier AUIRFS4115TRL vs IRFS4115
IRFS4115TRL Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRFS4115TRL vs IRFS4115TRL
IRFS4115 Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRFS4115TRL vs IRFS4115
Part Number Description Manufacturer Compare
AUIRFS4115 Power Field-Effect Transistor International Rectifier AUIRFS4115TRL vs AUIRFS4115
IRFS4115 Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier AUIRFS4115TRL vs IRFS4115
IRFS4115TRL Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRFS4115TRL vs IRFS4115TRL
AUIRFS4115 Power Field-Effect Transistor, Infineon Technologies AG AUIRFS4115TRL vs AUIRFS4115

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