Part Details for AUIRFZ34N by Infineon Technologies AG
Overview of AUIRFZ34N by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for AUIRFZ34N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRFZ34N-448-ND
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DigiKey | AUIRFZ34 - 55V-60V N-CHANNEL AUT Min Qty: 402 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
6000 In Stock |
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$0.7500 | Buy Now |
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Rochester Electronics | AUIRFZ34 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 6000 |
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$0.6405 / $0.7535 | Buy Now |
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DISTI #
2062092
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element14 Asia-Pacific | MOSFET, N CH, 55V, 29A, TO-220AB RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.4524 / $1.0079 | Buy Now |
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DISTI #
2062092
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Farnell | MOSFET, N CH, 55V, 29A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 14 Weeks, 1 Days Container: Each | 0 |
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$0.3617 / $0.6582 | Buy Now |
Part Details for AUIRFZ34N
AUIRFZ34N CAD Models
AUIRFZ34N Part Data Attributes
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AUIRFZ34N
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRFZ34N
Infineon Technologies AG
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRFZ34N
This table gives cross-reference parts and alternative options found for AUIRFZ34N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFZ34N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | AUIRFZ34N vs AUIRFZ34N |
| IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | AUIRFZ34N vs IRFZ34N |
| BUZ11 | 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | AUIRFZ34N vs BUZ11 |
| MTP36N06V | 32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | AUIRFZ34N vs MTP36N06V |
| IRFZ34NPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | AUIRFZ34N vs IRFZ34NPBF |
| IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | AUIRFZ34N vs IRFZ34N |
| IRFZ34NPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | AUIRFZ34N vs IRFZ34NPBF |