Datasheets
AUIRFZ44N by:

Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for AUIRFZ44N by Infineon Technologies AG

Overview of AUIRFZ44N by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for AUIRFZ44N

Part # Distributor Description Stock Price Buy
Rochester Electronics AUIRFZ44 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 3016
  • 1 $0.9494
  • 25 $0.9304
  • 100 $0.8924
  • 500 $0.8545
  • 1,000 $0.8070
$0.8070 / $0.9494 Buy Now
DISTI # 2062093
Farnell MOSFET, N CH, 55V, 49A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each 0
  • 1 $1.9981
  • 25 $1.5735
  • 100 $1.2613
  • 250 $1.0840
  • 500 $0.9054
$0.9054 / $1.9981 Buy Now

Part Details for AUIRFZ44N

AUIRFZ44N CAD Models

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AUIRFZ44N Part Data Attributes

AUIRFZ44N Infineon Technologies AG
Buy Now Datasheet
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AUIRFZ44N Infineon Technologies AG Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 530 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 49 A
Drain-source On Resistance-Max 0.0175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFZ44N

This table gives cross-reference parts and alternative options found for AUIRFZ44N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFZ44N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SMP60N06-18 60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments AUIRFZ44N vs SMP60N06-18
IRFZ46NPBF Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRFZ44N vs IRFZ46NPBF
IRFZ44NPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRFZ44N vs IRFZ44NPBF
IRFZ44NPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRFZ44N vs IRFZ44NPBF
IRFZ44N 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB NXP Semiconductors AUIRFZ44N vs IRFZ44N
AUIRFZ44N Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier AUIRFZ44N vs AUIRFZ44N
IRFZ44N,127 TRANSISTOR 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors AUIRFZ44N vs IRFZ44N,127
BUK456-60H TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors AUIRFZ44N vs BUK456-60H
Part Number Description Manufacturer Compare
BUK456-60H TRANSISTOR 60 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors AUIRFZ44N vs BUK456-60H
IRFZ44N 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB NXP Semiconductors AUIRFZ44N vs IRFZ44N
HUF75329P3 Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation AUIRFZ44N vs HUF75329P3
SSP50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor AUIRFZ44N vs SSP50N06
IRFZ44NPBF Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRFZ44N vs IRFZ44NPBF
RFP50N05 50A, 50V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation AUIRFZ44N vs RFP50N05
HUF75329P3 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC AUIRFZ44N vs HUF75329P3
HUF75329P3 42A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation AUIRFZ44N vs HUF75329P3
HRFZ44N 49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC AUIRFZ44N vs HRFZ44N
IRFZ46NPBF Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRFZ44N vs IRFZ46NPBF

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