Part Details for AUIRGP50B60PD1 by Infineon Technologies AG
Overview of AUIRGP50B60PD1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for AUIRGP50B60PD1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1864558
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Farnell | IGBT,N CH,W DIODE,600V,TO247AC RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 3 Days Container: Each | 0 |
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$5.8646 / $9.0272 | Buy Now |
Part Details for AUIRGP50B60PD1
AUIRGP50B60PD1 CAD Models
AUIRGP50B60PD1 Part Data Attributes
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AUIRGP50B60PD1
Infineon Technologies AG
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Datasheet
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AUIRGP50B60PD1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 15 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 15 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 161 ns | |
| Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for AUIRGP50B60PD1
This table gives cross-reference parts and alternative options found for AUIRGP50B60PD1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRGP50B60PD1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGP50B60PD1-EP | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | International Rectifier | AUIRGP50B60PD1 vs IRGP50B60PD1-EP |
| IRGP50B60PD1-EP | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | Infineon Technologies AG | AUIRGP50B60PD1 vs IRGP50B60PD1-EP |
| IRGP50B60PD1PBF | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | AUIRGP50B60PD1 vs IRGP50B60PD1PBF |
| IRGP50B60PD1-E | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | International Rectifier | AUIRGP50B60PD1 vs IRGP50B60PD1-E |
| IRGP50B60PD1 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | AUIRGP50B60PD1 vs IRGP50B60PD1 |
| IRGP50B60PD1 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | AUIRGP50B60PD1 vs IRGP50B60PD1 |
| IRGP50B60PD1PBF | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | AUIRGP50B60PD1 vs IRGP50B60PD1PBF |