Datasheets
AUIRLR3110ZTRL by:

Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Part Details for AUIRLR3110ZTRL by Infineon Technologies AG

Overview of AUIRLR3110ZTRL by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for AUIRLR3110ZTRL

Part # Distributor Description Stock Price Buy
DISTI # AUIRLR3110ZTRL-ND
DigiKey MOSFET N-CH 100V 63A DPAK Min Qty: 3000 Lead time: 12 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 3,000 $1.4349
$1.4349 Buy Now
DISTI # AUIRLR3110ZTRL
Avnet Americas Trans MOSFET N-CH 100V 63A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: AUIRLR3110ZTRL) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-AUIRLR3110ZTRL
Mouser Electronics MOSFETs AUTO 100V 1 N-CH HEXFET 14mOhms RoHS: Compliant 0
Order Now
Chip Stock   3000
RFQ
DISTI # SP001516790
EBV Elektronik Trans MOSFET N-CH 100V 63A 3-Pin(2+Tab) DPAK T/R (Alt: SP001516790) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for AUIRLR3110ZTRL

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AUIRLR3110ZTRL Part Data Attributes

AUIRLR3110ZTRL Infineon Technologies AG
Buy Now Datasheet
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AUIRLR3110ZTRL Infineon Technologies AG Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 250 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRLR3110ZTRL

This table gives cross-reference parts and alternative options found for AUIRLR3110ZTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRLR3110ZTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR3110ZTRRPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs IRLR3110ZTRRPBF
IRLR3110ZTRPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs IRLR3110ZTRPBF
AUIRLR3110Z Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs AUIRLR3110Z
IRLR3110ZTRLPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs IRLR3110ZTRLPBF
Part Number Description Manufacturer Compare
NVB6413ANT4G Power MOSFET 100V 42A 28 mohm Single N-Channel D2PAK NVB6413AN, D2PAK 2 LEAD, 800-REEL, Automotive Qualified onsemi AUIRLR3110ZTRL vs NVB6413ANT4G
NVD6824NLT4G-VF01 Single N−Channel Power MOSFET 100V, 41A, 20mΩ Power MOSFET, 2500-REEL, Automotive Qualified onsemi AUIRLR3110ZTRL vs NVD6824NLT4G-VF01
IRLR3110ZTRPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs IRLR3110ZTRPBF
AUIRLR3110Z Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs AUIRLR3110Z
IRLR3110ZTRRPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs IRLR3110ZTRRPBF
IRLR3110ZTRLPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG AUIRLR3110ZTRL vs IRLR3110ZTRLPBF

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