Part Details for BAS29212 by NXP Semiconductors
Overview of BAS29212 by NXP Semiconductors
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for BAS29212
BAS29212 CAD Models
BAS29212 Part Data Attributes
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BAS29212
NXP Semiconductors
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Datasheet
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BAS29212
NXP Semiconductors
DIODE 110 V, SILICON, SIGNAL DIODE, Signal Diode
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Power Dissipation-Max | 0.25 W | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 110 V | |
| Reverse Recovery Time-Max | 0.05 µs | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL |
Alternate Parts for BAS29212
This table gives cross-reference parts and alternative options found for BAS29212. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BAS29212, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BAS29,215 | BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin | NXP Semiconductors | BAS29212 vs BAS29,215 |
| BAS29-T | DIODE 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode | NXP Semiconductors | BAS29212 vs BAS29-T |
| BAS29T/R | Rectifier Diode | Nexperia | BAS29212 vs BAS29T/R |
| BAS29235 | DIODE 110 V, SILICON, SIGNAL DIODE, Signal Diode | NXP Semiconductors | BAS29212 vs BAS29235 |
| 933723180215 | Rectifier Diode, Avalanche, 1 Element, 0.25A, 110V V(RRM), Silicon, TO-236AB | Nexperia | BAS29212 vs 933723180215 |
| BAS29 | General Purpose High Voltage Diode, 3000-REEL | onsemi | BAS29212 vs BAS29 |
| BAS29-T | Rectifier Diode | Nexperia | BAS29212 vs BAS29-T |