BCR108WE6433
Description: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Overview of BCR108WE6433 by Infineon Technologies AG

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Part Data Attributes for BCR108WE6433 by Infineon Technologies AG

BCR108WE6433
Infineon Technologies AG
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
170 MHz
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  1. BCR108WE6433
    Infineon Technologies AG
    Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
    VS

Alternate Parts for BCR108WE6433

This table gives cross-reference parts and alternative options found for BCR108WE6433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCR108WE6433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BCR108WH6327XTSA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG BCR108WE6433 vs BCR108WH6327XTSA1
BCR108W Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN Infineon Technologies AG BCR108WE6433 vs BCR108W
Part Number Description Manufacturer Compare
BCR108W Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN Infineon Technologies AG BCR108WE6433 vs BCR108W
RN1905FE TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal Toshiba America Electronic Components BCR108WE6433 vs RN1905FE
KRC659U Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, USV, 5 PIN KEC BCR108WE6433 vs KRC659U
BCR108WE6327HTSA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Infineon Technologies AG BCR108WE6433 vs BCR108WE6327HTSA1
KRC653U-RTK/P Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, USV, 5 PIN KEC BCR108WE6433 vs KRC653U-RTK/P
BCR108WH6327XTSA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG BCR108WE6433 vs BCR108WH6327XTSA1

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