Part Details for BCR133E6327 by Rochester Electronics LLC
Overview of BCR133E6327 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BCR133E6327
BCR133E6327 CAD Models
BCR133E6327 Part Data Attributes
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BCR133E6327
Rochester Electronics LLC
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Datasheet
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BCR133E6327
Rochester Electronics LLC
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Reach Compliance Code | unknown | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 130 MHz |
Alternate Parts for BCR133E6327
This table gives cross-reference parts and alternative options found for BCR133E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCR133E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BCR133E6433 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Infineon Technologies AG | BCR133E6327 vs BCR133E6433 |
MMUN2211LT1G | NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | BCR133E6327 vs MMUN2211LT1G |
MMUN2211LT3 | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | onsemi | BCR133E6327 vs MMUN2211LT3 |
MMUN2211LT1 | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | onsemi | BCR133E6327 vs MMUN2211LT1 |
BCR133E6327XT | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Infineon Technologies AG | BCR133E6327 vs BCR133E6327XT |
BCR133B6327 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BCR133E6327 vs BCR133B6327 |
MMUN2211LT3G | NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL | onsemi | BCR133E6327 vs MMUN2211LT3G |
BCR133 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BCR133E6327 vs BCR133 |