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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BCR198WH6327XTSA1TR-ND
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DigiKey | TRANS PREBIAS PNP 50V SOT323 Min Qty: 36000 Lead time: 98 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$0.0398 / $0.0465 | Buy Now |
DISTI #
BCR198WH6327XTSA1
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Avnet Americas | Trans Digital BJT PNP 50V 100mA 3-Pin SOT-323 T/R - Tape and Reel (Alt: BCR198WH6327XTSA1) RoHS: Not Compliant Min Qty: 36000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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Future Electronics | AF Discretes RoHS: Not Compliant pbFree: Yes Min Qty: 36000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.0456 / $0.0513 | Buy Now |
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Future Electronics | AF Discretes RoHS: Not Compliant pbFree: Yes Min Qty: 36000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.0456 / $0.0513 | Buy Now |
DISTI #
C1S322000530546
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Chip1Stop | Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-323 T/R RoHS: Compliant pbFree: Yes | 139 |
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$0.0559 / $0.0783 | Buy Now |
DISTI #
SP000757912
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EBV Elektronik | Trans Digital BJT PNP 50V 100mA 3-Pin SOT-323 T/R (Alt: SP000757912) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BCR198WH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BCR198WH6327XTSA1
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 70 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 190 MHz |
This table gives cross-reference parts and alternative options found for BCR198WH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCR198WH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BCR158WH6327XTSA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BCR198WH6327XTSA1 vs BCR158WH6327XTSA1 |
KRA109S-RTK/P | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | KEC | BCR198WH6327XTSA1 vs KRA109S-RTK/P |
KRA309E | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ESM, 3 PIN | KEC | BCR198WH6327XTSA1 vs KRA309E |
RN2209(TPE4) | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal | Toshiba America Electronic Components | BCR198WH6327XTSA1 vs RN2209(TPE4) |
KSR2003TA | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | Fairchild Semiconductor Corporation | BCR198WH6327XTSA1 vs KSR2003TA |
BCR192WH6327XTSA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BCR198WH6327XTSA1 vs BCR192WH6327XTSA1 |
RN2009(TPE2) | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | Toshiba America Electronic Components | BCR198WH6327XTSA1 vs RN2009(TPE2) |
RN2109(TE85L) | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purpose Small Signal | Toshiba America Electronic Components | BCR198WH6327XTSA1 vs RN2109(TE85L) |
FHRA109 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Fenghua (HK) Electronics Ltd | BCR198WH6327XTSA1 vs FHRA109 |
KSR2003BU | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | Fairchild Semiconductor Corporation | BCR198WH6327XTSA1 vs KSR2003BU |