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Part Details for BF622,115 by Nexperia
Results Overview of BF622,115 by Nexperia
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
BF622,115 Information
BF622,115 by Nexperia is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BF622,115
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
32AC6694
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Newark | Transistor, Aec-Q101, 250V, To-243, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:250V, Transition Frequency Ft:60Mhz, Power Dissipation Pd:500Mw, Dc Collector Current:50Ma, Dc Current Gain Hfe:50Hfe, Transistor Case Rohs Compliant: Yes |Nexperia BF622,115 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.3280 / $1.0500 | Buy Now |
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DISTI #
BF622,115
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Avnet Americas | Trans GP BJT NPN 250V 0.05A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: BF622,115) COO: China RoHS: Compliant Min Qty: 5000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2168 / $0.2213 | Buy Now |
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DISTI #
BF622.115
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TME | Transistor: NPN, bipolar, 250V, 50mA, SC62,SOT89 Min Qty: 1 | 0 |
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$0.5120 / $1.2800 | RFQ |
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Chip Stock | TransGPBJTNPN250V0.05A1100mWAutomotive4-Pin(3+Tab)SOT-89T/R | 46000 |
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RFQ |
Part Details for BF622,115
BF622,115 CAD Models
BF622,115 Part Data Attributes
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BF622,115
Nexperia
Buy Now
Datasheet
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Compare Parts:
BF622,115
Nexperia
BF622 - NPN high-voltage transistor@en-us SOT-89 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT-89 | |
| Package Description | Plastic, Sot-89, 3 Pin | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT89 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Date Of Intro | 1997-09-01 | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 0.05 A | |
| Collector-Base Capacitance-Max | 1.6 Pf | |
| Collector-Emitter Voltage-Max | 250 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 50 | |
| JESD-30 Code | R-PSSO-F3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | Npn | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin | |
| Terminal Form | Flat | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 60 Mhz | |
| VCEsat-Max | 0.6 V |
Alternate Parts for BF622,115
This table gives cross-reference parts and alternative options found for BF622,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF622,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 933387860115 | NXP Semiconductors | Check for Price | TRANSISTOR 50 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, MPT3, SMD, UPAK-3, BIP General Purpose Small Signal | BF622,115 vs 933387860115 |
| BF622-T | NXP Semiconductors | Check for Price | TRANSISTOR 50 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal | BF622,115 vs BF622-T |
| BF622 | Siemens | Check for Price | Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-243 | BF622,115 vs BF622 |
| BF622 | Diodes Incorporated | Check for Price | Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, NPN, Silicon | BF622,115 vs BF622 |
BF622,115 Frequently Asked Questions (FAQ)
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A good thermal design should include a solid copper fill on the PCB, connected to the thermal pad of the BF622,115. This helps to dissipate heat efficiently. Additionally, using a thermal via array under the device can improve thermal performance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Also, consider using a heat sink or a thermal interface material to reduce the thermal resistance.
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The BF622,115 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the PCB is properly grounded to prevent damage from electrostatic discharge.
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To minimize parasitic inductance, use a compact layout with short, direct connections between components. Avoid using vias or long traces, and consider using a ground plane to reduce inductance. Additionally, use a common ground point for the device and other components to minimize loop inductance.
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Choose a PCB material with a high thermal conductivity, such as FR4 or a high-thermal-conductivity laminate, to help dissipate heat efficiently. Avoid using materials with high moisture absorption, as this can affect the device's reliability.