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BLA6H0912-500,112 by:

BLA6H0912-500

Part Details for BLA6H0912-500,112 by NXP Semiconductors

Overview of BLA6H0912-500,112 by NXP Semiconductors

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Telecommunications Renewable Energy Communication and Networking Automotive

Price & Stock for BLA6H0912-500,112

Part # Distributor Description Stock Price Buy
DISTI # 70R2739
Newark N Channel Avoinics Ldmos Transistor, 50V, 960Mhz - 1215Mhz, 2-Sot-634A, Drain Source Voltage Vds:50V, Continuous Drain Current Id:54A, Power Dissipation:500W, Operating Frequency Min:960Mhz, Operating Frequency Max:1.215Ghz, Msl:- Rohs Compliant: Yes |Nxp BLA6H0912-500,112 RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for BLA6H0912-500,112

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BLA6H0912-500,112 Part Data Attributes

BLA6H0912-500,112 NXP Semiconductors
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BLA6H0912-500,112 NXP Semiconductors BLA6H0912-500
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code DFM
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Pin Count 2
Manufacturer Package Code SOT634A
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 54 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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