Datasheets
BLF248 by:

2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN

Part Details for BLF248 by NXP Semiconductors

Overview of BLF248 by NXP Semiconductors

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Price & Stock for BLF248

Part # Distributor Description Stock Price Buy
Chip1Cloud Trans RF MOSFET N-CH 65V 25A 5-Pin CDFM / VHF push-pull power MOS transistor 18000
RFQ

Part Details for BLF248

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BLF248 Part Data Attributes

BLF248 NXP Semiconductors
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BLF248 NXP Semiconductors 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 4
Manufacturer Package Code SOT262A1
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 500 W
Power Dissipation-Max (Abs) 500 W
Power Gain-Min (Gp) 10 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF248

This table gives cross-reference parts and alternative options found for BLF248. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF248, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLF248,112 BLF248 NXP Semiconductors BLF248 vs BLF248,112
934006630112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF248 vs 934006630112
Part Number Description Manufacturer Compare
MRF141G RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 Advanced Semiconductor Inc BLF248 vs MRF141G
MRF175GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM BLF248 vs MRF175GV
BLF348 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN, FET RF Power NXP Semiconductors BLF248 vs BLF348
MRF175GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC BLF248 vs MRF175GV
MRF175GV RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc BLF248 vs MRF175GV
BLF368 RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 Advanced Semiconductor Inc BLF248 vs BLF368
BLF248,112 BLF248 NXP Semiconductors BLF248 vs BLF248,112
934006630112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF248 vs 934006630112
MRF175GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity BLF248 vs MRF175GV

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